Evidence for a strain-tuned topological phase transition in ZrTe5
                    
                        
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                    چکیده
منابع مشابه
Electronic evidence of temperature-induced Lifshitz transition and topological nature in ZrTe5
The topological materials have attracted much attention for their unique electronic structure and peculiar physical properties. ZrTe5 has host a long-standing puzzle on its anomalous transport properties manifested by its unusual resistivity peak and the reversal of the charge carrier type. It is also predicted that single-layer ZrTe5 is a two-dimensional topological insulator and there is poss...
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Lars Winterfeld,1,2 Luis A. Agapito,1 Jin Li,1 Nicholas Kioussis,1,* Peter Blaha,3 and Yong P. Chen4 1Department of Physics, California State University, Northridge, California 91330-8268, USA 2Institut für Physik, University of Technology Ilmenau, 98684 Ilmenau, Germany 3Institute for Materials Chemistry, TU Vienna, A-1060 Vienna, Austria 4Department of Physics, Purdue University, West Lafayet...
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The nematic-to-isotropic orientational phase transition, or equivalently the RP 2 model, is considered in two dimensions and the question of the nature of the phase transition is addressed. Using powerful conformal techniques adapted to the investigation of critical properties of two-dimensional scale-invariant systems, we report strong evidences for a transition governed by topological defects...
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ZrTe5 and HfTe5 have attracted increasingly attention recently since the theoretical prediction of being topological insulators (TIs). However, subsequent works show many contradictions about their topolog-ical nature. Three possible phases, i.e. strong TI, weak TI, and Dirac semi-metal, have been observed in different experiments until now. Essentially whether ZrTe5 or HfTe5 has a band gap or ...
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In a three-dimensional topological insulator Bi2Se3, a stress control for band gap manipulation was predicted but no systematic investigation has been performed yet due to the requirement of large external stress. We report herein on the strain-dependent results for Bi2Se3 films of various thicknesses that are grown via a self-organized ordering process. Using small angle X-ray scattering and R...
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ژورنال
عنوان ژورنال: Science Advances
سال: 2019
ISSN: 2375-2548
DOI: 10.1126/sciadv.aav9771